HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

SMD fuse Alloy resistance Precision resistor fuse ever ohms walter current diverter

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTC144TCA,CJ,Digital Transistors

DTC144TCA

Digital Transistors ,DTC144TCA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD162N31AA01CJ
Manufacturer Product Number：	DTC144TCA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-23
Description：	Digital Transistors ,DTC144TCA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

DTC113ZCA

Digital Transistors ,DTC113ZCA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTC114ECA

Digital Transistors ,DTC114ECA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-23

$0.000000 More
DTC114TCA

Digital Transistors ,DTC114TCA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More
DTC114WCA

Digital Transistors ,DTC114WCA ,NPN ,200mW ,100mA ,50V ,24 ,SOT-23

$0.000000 More
DTC114YCA

Digital Transistors ,DTC114YCA ,NPN ,200mW ,100mA ,50V ,68 ,SOT-23

$0.000000 More
DTC123JCA

Digital Transistors ,DTC123JCA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-23

$0.000000 More
DTC123YCA

Digital Transistors ,DTC123YCA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTC124ECA

Digital Transistors ,DTC124ECA ,NPN ,200mW ,100mA ,50V ,56 ,SOT-23

$0.000000 More
DTC143ECA

Digital Transistors ,DTC143ECA ,NPN ,200mW ,100mA ,50V ,20 ,SOT-23

$0.000000 More
DTC143TCA

Digital Transistors ,DTC143TCA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-09-06

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}