HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

fuse Alloy resistance current diverter SMD fuse ever ohms walter Precision resistor

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTC143XKA,CJ,Digital Transistors

DTC143XKA

Digital Transistors ,DTC143XKA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-23-3L

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD146N31A326CJ
Manufacturer Product Number：	DTC143XKA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-23-3L
Description：	Digital Transistors ,DTC143XKA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-23-3L

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

DTC113ZKA

Digital Transistors ,DTC113ZKA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23-3L

$0.000000 More
DTC114TKA

Digital Transistors ,DTC114TKA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23-3L

$0.000000 More
DTC124EKA

Digital Transistors ,DTC124EKA ,NPN ,200mW ,100mA ,50V ,56 ,SOT-23-3L

$0.000000 More
DTC144EKA

Digital Transistors ,DTC144EKA ,NPN ,200mW ,100mA ,50V ,68 ,SOT-23-3L

$0.000000 More
DTC144TKA

Digital Transistors ,DTC144TKA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23-3L

$0.000000 More
DTC114EKA

Digital Transistors ,DTC114EKA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-23-3L

$0.000000 More
DTC114WKA

Digital Transistors ,DTC114WKA ,NPN ,200mW ,100mA ,50V ,24 ,SOT-23-3L

$0.000000 More
DTC114YKA

Digital Transistors ,DTC114YKA ,NPN ,200mW ,100mA ,50V ,68 ,SOT-23-3L

$0.000000 More
DTC143TKA

Digital Transistors ,DTC143TKA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23-3L

$0.000000 More
DTC143ZKA

Digital Transistors ,DTC143ZKA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-23-3L

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-06-10

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}