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2SC4097,CJ,Bipolar Transistors

2SC4097

Bipolar Transistors ,2SC4097 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-323,CP

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The image is for reference only, please refer to the drawing for details

Data Sheet： 2SC4097_SOT-323

Product number：	QT-TQT239N32VC01060502CJP
Manufacturer Product Number：	2SC4097
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	32V
Base Voltage(VCBO) ：	40V
Power Disspation ：	200mW
package ：	SOT-323
Description：	Bipolar Transistors ,2SC4097 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-323,CP

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	2SC4097_SOT-323

Lead time： Estimated delivery date 2026-09-03

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Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

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Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

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