2SC4097_CJ_Bipolar Transistors_NPN_32V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SC4097_SOT-323

Lead time： Estimated delivery date 2026-07-22

Online Inquiry

Product Recommendation Maker Dynamics Applications

BF820

Bipolar Transistors ,BF820 ,NPN ,VCEO:300V ,VCBO: 300V ,250mW ,50mA ,SOT-23

$0.000000 More
BC847T

Bipolar Transistors ,BC847T ,NPN ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,1F

$0.000000 More
2SD1781

Bipolar Transistors ,2SD1781 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AFR

$0.000000 More
S9015W

Bipolar Transistors ,S9015W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-323

$0.000000 More
KTA2015

Bipolar Transistors ,KTA2015 ,PNP ,VCEO:30V ,VCBO: 35V ,100mW ,500mA ,SOT-323,ZO

$0.000000 More
BC858W

Bipolar Transistors ,BC858W ,PNP ,VCEO:30V ,VCBO: 30V ,150mW ,100mA ,SOT-323,3K

$0.000000 More
MMSTA56

Bipolar Transistors ,MMSTA56 ,PNP ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-323

$0.000000 More
MMBT3904M

Bipolar Transistors ,MMBT3904 ,NPN ,VCEO:40V ,VCBO: 60V ,100mW ,200mA ,SOT-723,1N

$0.014073 More
C1815

Bipolar Transistors ,C1815 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23

$0.000000 More
2SC4618

Bipolar Transistors ,2SC4618 ,NPN ,VCEO:25V ,VCBO: 40V ,150mW ,50mA ,SOT-523,AQ

$0.000000 More
2SA812

Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M7

$0.000000 More
2SD1782

Bipolar Transistors ,2SD1782 ,NPN ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-23,AJQ

$0.000000 More
KTC3875

Bipolar Transistors ,KTC3875 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-23,ALG

$0.000000 More
2SC2715

Bipolar Transistors ,2SC2715 ,NPN ,VCEO:30V ,VCBO: 35V ,350mW ,50mA ,SOT-23,RR1

$0.000000 More
KTA1505

Bipolar Transistors ,KTA1505 ,PNP ,VCEO:30V ,VCBO: 35V ,150mW ,500mA ,SOT-23,AZO

$0.000000 More
BC856

Bipolar Transistors ,BC856 ,PNP ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,3B

$0.000000 More
MMBTA94

Bipolar Transistors ,MMBTA94 ,PNP ,VCEO:400V ,VCBO: 400V ,350mW ,200mA ,SOT-23

$0.000000 More
SS8050

Bipolar Transistors ,SS8050 ,NPN ,VCEO:25V ,VCBO: 40V ,300mW ,1500mA ,SOT-23

$0.000000 More
M8050

Bipolar Transistors ,M8050 ,NPN ,VCEO:25V ,VCBO: 40V ,200mW ,800mA ,SOT-23

$0.000000 More
BC817

Bipolar Transistors ,BC817 ,NPN ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-23,6A

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Product number：	QT-TQT239N32VC01060502CJP
Manufacturer Product Number：	2SC4097
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	32V
Base Voltage(VCBO) ：	40V
Power Disspation ：	200mW
package ：	SOT-323
Description：	Bipolar Transistors ,2SC4097 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-323,CP

2SC4097,CJ,Bipolar Transistors

2SC4097

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

2SC4097,CJ,Bipolar Transistors

2SC4097

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications