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LM358,CJ,Operational Amplifier

LM358

Operational Amplifier LM358 VS(MIN):3V VS(MAX):32V INPUT:5mV SOP8

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The image is for reference only, please refer to the drawing for details

Data Sheet： CJ_LM358.pdf

Product number：	IC11-LM358-SO8CJ
Manufacturer Product Number：	LM358
Manufacturer ：	CJ
Series ：	CJ-Operational Amplifier
Product Type ：	Operational Amplifier
Package ：	SOP8
Part Number ：	LM358
Power Dissipation (PD) ：	3V
Output current ：	32V
Voltage ：	5mV
Description：	Operational Amplifier LM358 VS(MIN):3V VS(MAX):32V INPUT:5mV SOP8

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Operational Amplifier
Product Type	Operational Amplifier
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	CJ_LM358.pdf

Lead time： Estimated delivery date 2025-04-25

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Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

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The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

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