DTC143TUA_CJ_Digital Transistors_NPN_200mW_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-06-30

Online Inquiry

Product Recommendation Maker Dynamics Applications

DTC114EKA

Digital Transistors ,DTC114EKA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-23-3L

$0.000000 More
DTA123JCA

Digital Transistors ,DTA123JCA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-23

$0.000000 More
DTA143ZE

Digital Transistors ,DTA143ZE ,PNP ,150mW ,100mA ,50V ,80 ,SOT-523

$0.000000 More
DTC124EM

Digital Transistors ,DTC124EM ,NPN ,100mW ,100mA ,50V ,56 ,SOT-723

$0.000000 More
DTC123YKA

Digital Transistors ,DTC123YKA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23-3L

$0.000000 More
DTC115EM

Digital Transistors ,DTC115EM ,NPN ,100mW ,100mA ,50V ,82 ,SOT-723

$0.000000 More
DTA114ESA

Digital Transistors ,DTA114ESA ,PNP ,300mW ,100mA ,50V ,30 ,TO-92S

$0.000000 More
DTC123YCA

Digital Transistors ,DTC123YCA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTA144ECA

Digital Transistors ,DTA144ECA ,PNP ,200mW ,100mA ,50V ,68 ,SOT-23

$0.000000 More
DTC113ZCA

Digital Transistors ,DTC113ZCA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTC123JUA

Digital Transistors ,DTC123JUA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More
DTA143XM

Digital Transistors ,DTA143XM ,PNP ,100mW ,100mA ,50V ,30 ,SOT-723

$0.000000 More
DTA144TE

Digital Transistors ,DTA144TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTA143ZUA

Digital Transistors ,DTA143ZUA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More
TSC114ENND03

Digital Transistors ,TSC114ENND03 ,NPN ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTA124EKA

Digital Transistors ,DTA124EKA ,PNP ,200mW ,100mA ,50V ,56 ,SOT-23-3L

$0.000000 More
DTC144ESA

Digital Transistors ,DTC144ESA ,NPN ,300mW ,100mA ,50V ,68 ,TO-92S

$0.000000 More
DTA143XCA

Digital Transistors ,DTA143XCA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23

$0.000000 More
DTC114ESA

Digital Transistors ,DTC114ESA ,NPN ,300mW ,100mA ,50V ,30 ,TO-92S

$0.000000 More
DTC123JM

Digital Transistors ,DTC123JM ,NPN ,100mW ,100mA ,50V ,80 ,SOT-723

$0.000000 More

Product Recommendation Maker Dynamics Applications

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Product number：	QD-DD143N31AA02CJ
Manufacturer Product Number：	DTC143TUA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-323
Description：	Digital Transistors ,DTC143TUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

DTC143TUA,CJ,Digital Transistors

DTC143TUA

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

DTC143TUA,CJ,Digital Transistors

DTC143TUA

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications