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S9015W,CJ,Bipolar Transistors

S9015W

Bipolar Transistors ,S9015W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-323

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The image is for reference only, please refer to the drawing for details

Data Sheet： S9015W_SOT-323

Product number：	QT-TQT727P45VC05060302CJ
Manufacturer Product Number：	S9015W
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	45V
Base Voltage(VCBO) ：	50V
Power Disspation ：	200mW
package ：	SOT-323
Description：	Bipolar Transistors ,S9015W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5A

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BC807W

Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5B

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Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5C

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File Type	File Name
Data Sheet	S9015W_SOT-323

Lead time： Estimated delivery date 2026-10-20

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Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

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