2SA2029_CJ_Bipolar Transistors_PNP_50V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SA2029_SOT-723

Lead time： Estimated delivery date 2026-10-09

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Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

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Product number：	QT-TQT083P50VC02011104CJS
Manufacturer Product Number：	2SA2029
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	150mW
package ：	SOT-723
Description：	Bipolar Transistors ,2SA2029 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-723,FS

2SA2029,CJ,Bipolar Transistors

2SA2029

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2SA2029,CJ,Bipolar Transistors

2SA2029

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