2SB1198_CJ_Bipolar Transistors_NPN_80V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SB1198_SOT-23.pdf

Lead time： Estimated delivery date 2026-10-17

Online Inquiry

Product Recommendation Maker Dynamics Applications

2SB709A

Bipolar Transistors ,2SB709A ,PNP ,VCEO:45V ,VCBO: 45V ,200mW ,100mA ,SOT-23,BS1

$0.000000 More
2SA1611

Bipolar Transistors ,2SA1611 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,M6

$0.000000 More
PZTA56

Bipolar Transistors ,PZTA56 ,PNP ,VCEO:80V ,VCBO: 80V ,1000mW ,500mA ,SOT-223

$0.000000 More
S9015W

Bipolar Transistors ,S9015W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-323

$0.000000 More
BCW61

Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BB

$0.000000 More
2SC4215

Bipolar Transistors ,2SC4215 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-323,QY

$0.000000 More
2SA1832

Bipolar Transistors ,2SA1832 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-523,SY

$0.000000 More
BC848W

Bipolar Transistors ,BC848W ,NPN ,VCEO:30V ,VCBO: 30V ,150mW ,100mA ,SOT-323,1K

$0.000000 More
MMST2907A

Bipolar Transistors ,MMST2907A ,PNP ,VCEO:60V ,VCBO: 60V ,200mW ,600mA ,SOT-323

$0.011728 More
2SB709A

Bipolar Transistors ,2SB709A ,PNP ,VCEO:45V ,VCBO: 45V ,200mW ,100mA ,SOT-23,BQ1

$0.000000 More
2SB624

Bipolar Transistors ,2SB624 ,PNP ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,BV3

$0.000000 More
S9013W

Bipolar Transistors ,S9013W ,NPN ,VCEO:25V ,VCBO: 40V ,200mW ,500mA ,SOT-323

$0.000000 More
2SA1774

Bipolar Transistors ,2SA1774 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-523,FS

$0.000000 More
BCW61

Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BA

$0.000000 More
KTA1505

Bipolar Transistors ,KTA1505 ,PNP ,VCEO:30V ,VCBO: 35V ,150mW ,500mA ,SOT-23,AZG

$0.000000 More
MMBTA55

Bipolar Transistors ,MMBTA55 ,PNP ,VCEO:60V ,VCBO: 60V ,225mW ,500mA ,SOT-23

$0.000000 More
2SA1235A

Bipolar Transistors ,2SA1235A ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,200mA ,SOT-23,M.F

$0.000000 More
BC856

Bipolar Transistors ,BC856 ,PNP ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,3B

$0.000000 More
2SC4098

Bipolar Transistors ,2SC4098 ,NPN ,VCEO:25V ,VCBO: 40V ,200mW ,50mA ,SOT-323,AN

$0.000000 More
BCW68

Bipolar Transistors ,BCW68 ,PNP ,VCEO:45V ,VCBO: 60V ,330mW ,800mA ,SOT-23,DH

$0.000000 More

Product Recommendation Maker Dynamics Applications

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Product number：	QT-TQT769P80VC20060501CJ
Manufacturer Product Number：	2SB1198
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	80V
Base Voltage(VCBO) ：	80V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SB1198 ,PNP ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-23

2SB1198,CJ,Bipolar Transistors

2SB1198

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

2SB1198,CJ,Bipolar Transistors

2SB1198

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications