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2SB1198,CJ,Bipolar Transistors

2SB1198

Bipolar Transistors ,2SB1198 ,PNP ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： 2SB1198_SOT-23.pdf

Product number：	QT-TQT769P80VC20060501CJ
Manufacturer Product Number：	2SB1198
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	80V
Base Voltage(VCBO) ：	80V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SB1198 ,PNP ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	2SB1198_SOT-23.pdf

Lead time： Estimated delivery date 2025-05-16

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

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