2SA812_CJ_Bipolar Transistors_PNP_50V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SA812_SOT-23.pdf

Lead time： Estimated delivery date 2026-10-09

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Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

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Product number：	QT-TQT095P50VC02060301CJ6
Manufacturer Product Number：	2SA812
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M6

2SA812,CJ,Bipolar Transistors

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2SA812,CJ,Bipolar Transistors

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