D882_CJ_Bipolar Transistors_NPN_30V_Parameters_ Price

D882,CJ,Bipolar Transistors

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

Product Series

CJ-TRANSISTOR

Product Type

Bipolar Transistors

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	D882_SOT-223.pdf

File Type

File Name

Data Sheet

D882_SOT-223.pdf

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What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

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Product number：	QT-TQT506N30VC01132719CJR
Manufacturer Product Number：	D882
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	30V
Base Voltage(VCBO) ：	40V
Power Disspation ：	1500mW
package ：	SOT-223
Description：	Bipolar Transistors ,D882 ,NPN ,VCEO:30V ,VCBO: 40V ,1500mW ,30000mA ,SOT-223,R

D882,CJ,Bipolar Transistors

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D882,CJ,Bipolar Transistors

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