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CJ2101,CJ,MOSFETS

CJ2101

MOS ,P-ch ,CJ2101 ,0.29W ,-1.4A ,-8V ,SOT-323

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MPM0190W29M11F8V06CJ
Manufacturer Product Number：	CJ2101
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	0.29W
Continuous Drain Current (ID) ：	-1.4A
Drain-Source Voltage (V) ：	-8V
Package ：	SOT-323
Description：	MOS ,P-ch ,CJ2101 ,0.29W ,-1.4A ,-8V ,SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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Lead time： Estimated delivery date 2026-05-11

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What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

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What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

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Photovoltaic inverters need to convert the direct current generated by solar panels into alternating current and output it to power loads such as water pumps. Therefore, devices that can withstand high voltage, high frequency, and high temperature are required. SiC devices have these characteristics, so it is possible to use SiC devices in photovoltaic inverters, but the specific use needs to be comprehensively considered based on the actual situation.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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