The following are common switch diode models and their characteristics. Except for 1N4148, other models cover different application scenarios such as high frequency, high voltage, and miniaturization:
1、 High frequency and high-speed type
1SS135 / 1SS153 / BA182
Specially designed for high-frequency circuits, the on resistance is as low as 0.7 Ω, and the inter electrode capacitance is only 0.7pF when turned off, making it suitable for RF signal switching (such as radio band switching).
1SS314: Reverse recovery time of 1ns, high-frequency performance better than 1N4148 (4ns), commonly used in high-end communication equipment.
HSC277 / DAP236U
Low reverse recovery charge (Qc), supports ultra high speed switching, suitable for high-frequency power modules and precision signal processing circuits.
2、 High voltage and high withstand voltage type
Toshiba HN1D05FE
Rated reverse voltage of 400V, leakage current of only 0.1 μ A, using ultra-thin SOT563 package (1.6mm × 1.6mm), suitable for high voltage scenarios such as LED drivers and industrial power supplies.
Built in dual diode structure reduces the number of circuit components and optimizes heat dissipation performance.
Vishay SiC Schottky diode (such as VSSC240FA65)
Adopting silicon carbide (SiC) technology, with a voltage resistance of 650V/1200V, supporting high-frequency switching (QC as low as 56nC), suitable for high-power scenarios such as photovoltaic inverters and charging piles.
3、 Micro patch type
ROHM UMN10N/UMN20N/UMR12N
SOT363 package, compact size, power consumption of only 200mW, withstand voltage of 80V, surge current resistance of up to 4000mA, suitable for portable devices and high-speed digital circuits.
UMN10N reverse recovery time of 4ns, balancing high frequency and low loss characteristics.
Thick film packaged diodes (such as 1206/0805)
The size is compatible with surface mount resistors (such as the 1206 package being 3.2mm × 1.6mm), using silver bonding technology, with a material rejection rate of less than 0.2%, strong resistance to mechanical impact, and suitable for high vibration environments such as automotive electronics.
4、 Multi pin integrated type
SOT23 packaged diode (such as MMBD4148CA)
Three pin design, integrated dual diodes, supports composite functional modules, commonly used for logic circuits and power protection.
Typical parameters: reverse voltage of 100V, average current of 200mA, forward voltage drop of 1V.
DO214（SMA/SMB/SMC）
Power type surface mount packaging, supporting currents above 1A, with excellent heat dissipation performance, commonly used in high current switch circuits of power modules.
5、 Wide temperature military grade
1N400X series
Withstand voltage of 50V1000V, although it is a rectifier diode, it can replace switch tubes in some scenarios and is suitable for industrial power supplies and wide temperature environments (55 ℃ to 150 ℃).
1SV99 / BA482484
Military grade temperature range, small inter electrode capacitance, used for high-frequency signal processing of precision instruments and aerospace equipment.
Packaging and Application Suggestions
High frequency scenario: Prioritize choosing 1SS series or SOD323 packaged devices to reduce the impact of parasitic parameters.
High voltage demand: Toshiba HN1D05FE or Vishay SiC diode, balancing voltage resistance and efficiency.
Miniature design: SOT363 or thick film 0603 packaging, saving PCB space.
Industrial environment: Thick film packaging or DO214, strong impact resistance and good heat dissipation.
The above models can be selected based on specific parameters such as reverse voltage, switching speed, and packaging size, combined with the manufacturer's manual. Some devices need to pay attention to the differences in high-frequency characteristics compared to ordinary diodes (such as voltage regulators not suitable for high-frequency switches).
