LMDL914T1G_LRC_Switching Diodes_100V_200mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	LRC
Product Series	LRC-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	LMDL914T1G.pdf

Lead time： Estimated delivery date 2026-03-10

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Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What are the design issues of inverters during the transition from silicon to silicon carbide (SiC)? The design of silicon carbide device inverters is a complex process that requires consideration of many factors to ensure their reliability and performance. Therefore, designers need to fully understand the characteristics of silicon carbide devices and make corresponding adjustments during design to ensure that the inverter can meet the requirements of the application environment

What are the differences in application scenarios between single FET and MOSFET transistors? Single FET and MOSFET have a wide range of application prospects in switch circuits and power amplifiers, and the specific choice should be determined according to the specific application scenario and requirements.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Product number：	DS-SDS135100VA200020603LR
Manufacturer Product Number：	LMDL914T1G
Manufacturer ：	LRC
Series ：	LRC-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	100V
Output Current(IO) ：	200mA
Power Dissipation (Pd) ：	200mW
Forward voltage (VF) ：	1V
Package ：	SOD-323
Description：	Switching Diodes ,LMDL914T1G ,VR:100V ,IO:200mA ,PD:200mW ,VF:1V ,SOD-323,5D

LMDL914T1G,LRC,Switching Diodes

LMDL914T1G

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LMDL914T1G,LRC,Switching Diodes

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