2SC4617_CJ_Bipolar Transistors_NPN_50V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SC4617_SOT-523

Lead time： Estimated delivery date 2026-06-30

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S8550

Bipolar Transistors ,S8550 ,PNP ,VCEO:25V ,VCBO: 40V ,300mW ,500mA ,SOT-23

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2SC3052

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KTA1504

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2SD602

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MMBT3906

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BC807W

Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5B

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S9018

Bipolar Transistors ,S9018 ,NPN ,VCEO:15V ,VCBO: 30V ,200mW ,50mA ,SOT-23

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2SC1623

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MMST5401

Bipolar Transistors ,MMST5401 ,PNP ,VCEO:150V ,VCBO: 160V ,200mW ,600mA ,SOT-323

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BC857W

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KTC4075

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BC808

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BC857W

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2SC4180

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BC817

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2SD596

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BCX19

Bipolar Transistors ,BCX19 ,NPN ,VCEO:45V ,VCBO: 50V ,225mW ,500mA ,SOT-23

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Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Product number：	QT-TQT253N50VC02011103CS
Manufacturer Product Number：	2SC4617
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	150mW
package ：	SOT-523
Description：	Bipolar Transistors ,2SC4617 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-523,BS

2SC4617,CJ,Bipolar Transistors

2SC4617

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2SC4617,CJ,Bipolar Transistors

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