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BSS138K,CJ,MOSFETS

BSS138K

MOS ,N-ch ,BSS138K ,0.35W ,0.22A ,50V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM0290W35M1750V01CJ
Manufacturer Product Number：	BSS138K
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	0.35W
Continuous Drain Current (ID) ：	0.22A
Drain-Source Voltage (V) ：	50V
Package ：	SOT-23
Description：	MOS ,N-ch ,BSS138K ,0.35W ,0.22A ,50V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

BSS138

MOS ,N-ch ,BSS138 ,0.35W ,0.22A ,50V ,SOT-23

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Lead time： Estimated delivery date 2026-08-24

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Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

The switching performance of SiC MOSFET is controlled by gate drive The switching performance of SiC MOSFET is controlled by gate drive. Voltage source gate drive (VSG) is the most widely used structure in MOSFETs due to its low cost and simplified structure.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Characteristics and Application Scenarios of Silicon Carbide (SiC) SiC Ceramic is a high-performance material with characteristics such as high strength, high hardness, high temperature stability, excellent corrosion resistance, and low thermal expansion coefficient. It is widely used in fields such as semiconductor, aviation, defense, nuclear energy, and chemical industry.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

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