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BSS138,CJ,MOSFETS

BSS138

MOS ,N-ch ,BSS138 ,0.35W ,0.22A ,50V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM0280W35M1750V01CJ
Manufacturer Product Number：	BSS138
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	0.35W
Continuous Drain Current (ID) ：	0.22A
Drain-Source Voltage (V) ：	50V
Package ：	SOT-23
Description：	MOS ,N-ch ,BSS138 ,0.35W ,0.22A ,50V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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File Type	File Name

Lead time： Estimated delivery date 2025-05-04

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

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What is the reason why a discharge resistor must be set for MOS switch applications? What is the reason why a discharge resistor must be set for MOS switch applications?

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Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

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1200V SiC MOSFET tested under short-circuit conditions Short circuit capability of 1200 V SiC MOSFET and overcurrent protection solution using ready-made driver IC. Several design considerations were discussed to ensure accurate measurements. The test results indicate that the short-circuit capability of SiC MOSFET is highly correlated with the drain voltage and gate voltage, but not sensitive to the shell temperature and switching speed. By reducing the gate drive voltage or reducing the bus voltage, a longer endurance time can be achieved, but these solutions will lower the performance of SiC MOSFETs.

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