HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

Precision resistor SMD fuse Alloy resistance ever ohms fuse walter current diverter

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

CJ3401,CJ,MOSFETS

CJ3401

MOS ,P-ch ,CJ3401 ,0.35W ,-4.2A ,-30V ,SOT-23

✖

The image is for reference only, please refer to the drawing for details

Product number：	MOS-MPM0400W35M25F3001CJ
Manufacturer Product Number：	CJ3401
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	0.35W
Continuous Drain Current (ID) ：	-4.2A
Drain-Source Voltage (V) ：	-30V
Package ：	SOT-23
Description：	MOS ,P-ch ,CJ3401 ,0.35W ,-4.2A ,-30V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name

Lead time： Estimated delivery date 2026-04-19

Quantity

Unit Price

5

$0.064282

20

$0.049997

100

$0.035712

300

$0.031427

Quantity

Unit Price

1000

$0.025713

3000

$0.020713

* Order quantity ：

MPQ：3000

MOQ： 3000

MOQ：5

When the purchase quantity is less than the inventory, you can purchase directly, the purchase quantity is: N * MOQ
When the purchase quantity is greater than the inventory, you need to order; when ordering, the purchase quantity is: N * MPQ

Order quantity

Unit Price

Count

{{product.num}}

{{ isCn?'￥':'$'}}{{ isCn?product.price:product.usdPrice}}

{{isCn?'￥':'$'}}{{ isCn?product.subTotal:product.usdSubTotal}}

{{isCn?'￥':'$'}}{{ isCn?product.subTotal:product.usdSubTotal}}

Lead time： {{ (product.stock > 0 && product.num <= product.stock) ? 'In stock': 'Estimated delivery date ' + product.leadDate }}

Add to cart Buy it now

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Voltage polarity and symbol diagram of MOS transistor, N-MOS and P-MOS The following text introduces the symbol rules for N-MOS voltage polarity and P-MOS voltage polarity respectively

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Characteristics and Application Scenarios of Silicon Carbide (SiC) SiC Ceramic is a high-performance material with characteristics such as high strength, high hardness, high temperature stability, excellent corrosion resistance, and low thermal expansion coefficient. It is widely used in fields such as semiconductor, aviation, defense, nuclear energy, and chemical industry.

High power thyristor 4H SiC GTO 4H SiC GTO thyristor is a promising high-power device with broad application prospects in the field of high-power power supplies. With the continuous improvement of technology and the increase of market demand, 4H SiC GTO thyristors will be widely used.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

MOS transistor as a special driving circuit for switch transistor applications (commutation circuit) MOS transistor is a special driving circuit (commutation circuit) used as a switching transistor. Compared with ordinary transistor, MOS transistor has many advantages. However, when applied as a high-power switch transistor, due to the capacitive input characteristics of MOS transistor, the input terminal of MOS transistor is equivalent to a small capacitor. The input switch excitation signal is actually in the process of repeatedly charging and discharging this capacitor. During the charging and discharging process, the MOS transistor conducts and closes with a lag, which slows down the process of "on" and "off", which is not allowed by the switching element (increased power consumption, burning out the switch transistor).

Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}