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CJ3139K,CJ,MOSFETS

CJ3139K

MOS ,P-ch ,CJ3139K ,0.15W ,-0.66A ,-20V ,SOT-723

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MPM0070W15M06F2003CJ
Manufacturer Product Number：	CJ3139K
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	0.15W
Continuous Drain Current (ID) ：	-0.66A
Drain-Source Voltage (V) ：	-20V
Package ：	SOT-723
Description：	MOS ,P-ch ,CJ3139K ,0.15W ,-0.66A ,-20V ,SOT-723

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-08-25

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5

$0.061184

20

$0.047588

100

$0.033991

300

$0.029912

Quantity

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1000

$0.024474

3000

$0.019715

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MPQ：8000

MOQ： 8000

MOQ：5

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Product Recommendation Maker Dynamics Applications

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Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

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Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

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