HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

SMD fuse current diverter Alloy resistance walter fuse ever ohms Precision resistor

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

CJL3415,CJ,MOSFETS

CJL3415

MOS ,P-ch ,CJL3415 ,0.35W ,-4A ,-20V ,SOT-23-6L

✖

The image is for reference only, please refer to the drawing for details

Product number：	MOS-MPM0490W35M15F2009CJ
Manufacturer Product Number：	CJL3415
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	0.35W
Continuous Drain Current (ID) ：	-4A
Drain-Source Voltage (V) ：	-20V
Package ：	SOT-23-6L
Description：	MOS ,P-ch ,CJL3415 ,0.35W ,-4A ,-20V ,SOT-23-6L

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

CJL3443

MOS ,P-ch ,CJL3443 ,0.35W ,-4A ,-20V ,SOT-23-6L

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-03-31

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

What are the differences in application scenarios between single FET and MOSFET transistors? Single FET and MOSFET have a wide range of application prospects in switch circuits and power amplifiers, and the specific choice should be determined according to the specific application scenario and requirements.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

High power thyristor 4H SiC GTO 4H SiC GTO thyristor is a promising high-power device with broad application prospects in the field of high-power power supplies. With the continuous improvement of technology and the increase of market demand, 4H SiC GTO thyristors will be widely used.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}