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MMBT2907A,CJ,Bipolar Transistors

MMBT2907A

Bipolar Transistors ,MMBT2907A ,PNP ,VCEO:60V ,VCBO: 60V ,250mW ,600mA ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： MMBT2907A_SOT-23.pdf

Product number：	QT-TQT647P60VC02170101CJ
Manufacturer Product Number：	MMBT2907A
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	60V
Base Voltage(VCBO) ：	60V
Power Disspation ：	250mW
package ：	SOT-23
Description：	Bipolar Transistors ,MMBT2907A ,PNP ,VCEO:60V ,VCBO: 60V ,250mW ,600mA ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	MMBT2907A_SOT-23.pdf

Lead time： Estimated delivery date 2026-07-24

Quantity

Unit Price

5

$0.033045

20

$0.023407

100

$0.020653

300

$0.015146

Quantity

Unit Price

1000

$0.011703

3000

$0.009638

* Order quantity ：

MPQ：3000

MOQ： 3000

MOQ：5

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Product Recommendation Maker Dynamics Applications

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Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

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Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

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What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

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What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

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