B5818W_CJ_Schottky Diodes_30V_1000mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	B5817_B5819W_SOD-123.pdf

Lead time： Estimated delivery date 2024-12-24

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RB715F

Schottky Diodes ,RB715F ,VR:40V ,IO:30mA ,VF:0.37V ,PD:200mW ,SOT-323

$0.000000 More
BAS40W-06

Schottky Diodes ,BAS40W-06 ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-323

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SD107WS

Schottky Diodes ,SD107WS ,VR:30V ,- ,VF:0.8V ,PD:250mW ,SOD-323

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SD101AW

Schottky Diodes ,SD101AW ,VR:60V ,- ,VF:1V ,PD:400mW ,SOD-123

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DS520-30EAA02

Schottky Diodes ,DS520-30EAA02 ,VR:30V ,IO:100mA ,VF:0.46V ,PD:100mW , MLDFN0.6*0.3-2L-A

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1SS344

Schottky Diodes ,1SS344 ,VR:20V ,IO:500mA ,VF:0.55V ,PD:200mW ,SOT-23

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BAT43W

Schottky Diodes ,BAT43W ,VR:30V ,- ,VF:0.45V ,PD:200mW ,SOD-123

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B5819WS

Schottky Diodes ,B5819WS ,VR:40V ,IO:1000mA ,VF:0.9V ,PD:200mW ,SOD-323

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SD101CWS

Schottky Diodes ,SD101CWS ,VR:40V ,- ,VF:0.9V ,PD:200mW ,SOD-323

$0.000000 More
RB521CS-30

Schottky Diodes ,RB521CS-30 ,VR:30V ,IO:100mA ,VF:0.5V ,PD:100mW ,SOD-923

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RB715W

Schottky Diodes ,RB715W ,VR:40V ,IO:30mA ,VF:0.37V ,PD:150mW ,SOT-523

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BAT64X

Schottky Diodes ,BAT64X ,VR:40V ,IO:250mA ,VF:0.75V ,PD:150mW ,SOD-523

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SS112

Schottky Diodes ,SS112 ,VR:120V ,IO:1000mA ,VF:0.85V ,- ,SMA

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SS520

Schottky Diodes ,SS520 ,SMA ,JD

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BAS70TW

Schottky Diodes ,BAS70TW ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-363

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DS751-40LED02

Schottky Diodes ,DS751-40LED02 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:100mW ,WBFBP-02C

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SS38

Schottky Diodes ,SS38 ,VR:80V ,IO:3A ,VF:0.7V ,- ,SMA

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BAT42W

Schottky Diodes ,BAT42W ,VR:30V ,- ,VF:0.65V ,PD:200mW ,SOD-123

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SS36

Schottky Diodes ,SS36 ,VR:60V ,IO:3A ,VF:0.7V ,- ,SMA

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BAS40

Schottky Diodes ,BAS40 ,VR:40V ,IO:200mA ,VF:1V ,PD:225mW ,SOT-23

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Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product number：	DK-K11730V01A00231004CJ
Manufacturer Product Number：	B5818W
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	30V
Current (IO) ：	1000mA
Forward Voltage(VF) ：	0.875V
Power dissipation(Pd）：	450mW
Packge ：	SOD-123
Description：	Schottky Diodes ,B5818W ,VR:30V ,IO:1000mA ,VF:0.875V ,PD:450mW ,SOD-123

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