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L2N7002LT1G,LRC,MOSFETS

L2N7002LT1G

MOS ,L2N7002LT1G ,N-ch ,0.225W ,0.115A ,60V ,- ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： L2N7002LT1G.pdf

Product number：	MOS-M7002NW225M0160VN01LR
Manufacturer Product Number：	L2N7002LT1G
Manufacturer ：	LRC
Series ：	LRC-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	0.225W
Continuous Drain Current (ID) ：	0.115A
Drain-Source Voltage (V) ：	60V
Package ：	SOT-23
Description：	MOS ,L2N7002LT1G ,N-ch ,0.225W ,0.115A ,60V ,- ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	LRC
Product Series	LRC-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

2N7002

MOS ,N-ch ,2N7002 ,0.225W ,0.115A ,60V ,SOT-23

$0.009982 More

File

File Type	File Name
Data Sheet	L2N7002LT1G.pdf

Lead time： Estimated delivery date 2026-06-20

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Introduction to the Principle and Function of SiC Silicon Carbide MOSFET Silicon carbide MOSFET is a type of MOSFET manufactured based on silicon carbide material. Its structure mainly includes a silicon carbide substrate, an insulation layer, a gate electrode, a drain electrode, and a source electrode. In its working principle, when the voltage applied to the gate changes, the silicon carbide MOSFET can achieve control from the on state to the off state, realizing the function of power switching. Silicon carbide MOS recommendation: Junxin MOS

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

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Voltage polarity and symbol diagram of MOS transistor, N-MOS and P-MOS The following text introduces the symbol rules for N-MOS voltage polarity and P-MOS voltage polarity respectively

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What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

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