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UT6354L-AA3-R,UTC,MOSFETS

UT6354L-AA3-R

MOS ,UT6354L-AA3-R ,P-ch ,1.5W ,-5A ,-60V ,SOT-223

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The image is for reference only, please refer to the drawing for details

Data Sheet： UT6354-H.pdf

Product number：	MOS-MM14LP1W50F5AF6024UT
Manufacturer Product Number：	UT6354L-AA3-R
Manufacturer ：	UTC
Series ：	UTC-POWER MOSFET
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	1.5W
Continuous Drain Current (ID) ：	-5A
Drain-Source Voltage (V) ：	-60V
Package ：	SOT-223
Description：	MOS ,UT6354L-AA3-R ,P-ch ,1.5W ,-5A ,-60V ,SOT-223

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	UTC
Product Series	UTC-POWER MOSFET
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

UT6354G-AA3-R

MOS ,UT6354G-AA3-R ,P-ch ,1.5W ,-5A ,-60V ,SOT-223

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File

File Type	File Name
Data Sheet	UT6354-H.pdf

Lead time： Estimated delivery date 2026-06-28

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What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

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What are the design issues of inverters during the transition from silicon to silicon carbide (SiC)? The design of silicon carbide device inverters is a complex process that requires consideration of many factors to ensure their reliability and performance. Therefore, designers need to fully understand the characteristics of silicon carbide devices and make corresponding adjustments during design to ensure that the inverter can meet the requirements of the application environment

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Introduction to Power MOSFETs for Motor Drive Applications The application of motor drive is quite extensive, among which power MOSFET plays an important role. Anson Mei has a diverse range of power MOSFET product lines, among which NTBLS1D5N10MC unipolar, N-channel power MOSFET can meet the stringent requirements of related applications and is one of the best choices for motor drive control.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

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