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UT6354G-AE3-R,UTC,MOSFETS

UT6354G-AE3-R

MOS ,UT6354G-AE3-R ,P-ch ,1W ,-5A ,-60V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： UT6354-H.pdf

Product number：	MOS-MM150P1W00F5AF6001UT
Manufacturer Product Number：	UT6354G-AE3-R
Manufacturer ：	UTC
Series ：	UTC-POWER MOSFET
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	1W
Continuous Drain Current (ID) ：	-5A
Drain-Source Voltage (V) ：	-60V
Package ：	SOT-23
Description：	MOS ,UT6354G-AE3-R ,P-ch ,1W ,-5A ,-60V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	UTC
Product Series	UTC-POWER MOSFET
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	UT6354-H.pdf

Lead time： Estimated delivery date when out of stock 2025-05-11

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Introduction to Power MOSFETs for Motor Drive Applications The application of motor drive is quite extensive, among which power MOSFET plays an important role. Anson Mei has a diverse range of power MOSFET product lines, among which NTBLS1D5N10MC unipolar, N-channel power MOSFET can meet the stringent requirements of related applications and is one of the best choices for motor drive control.

MOS transistor as a special driving circuit for switch transistor applications (commutation circuit) MOS transistor is a special driving circuit (commutation circuit) used as a switching transistor. Compared with ordinary transistor, MOS transistor has many advantages. However, when applied as a high-power switch transistor, due to the capacitive input characteristics of MOS transistor, the input terminal of MOS transistor is equivalent to a small capacitor. The input switch excitation signal is actually in the process of repeatedly charging and discharging this capacitor. During the charging and discharging process, the MOS transistor conducts and closes with a lag, which slows down the process of "on" and "off", which is not allowed by the switching element (increased power consumption, burning out the switch transistor).

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

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Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

Introduction to the Principle and Function of SiC Silicon Carbide MOSFET Silicon carbide MOSFET is a type of MOSFET manufactured based on silicon carbide material. Its structure mainly includes a silicon carbide substrate, an insulation layer, a gate electrode, a drain electrode, and a source electrode. In its working principle, when the voltage applied to the gate changes, the silicon carbide MOSFET can achieve control from the on state to the off state, realizing the function of power switching. Silicon carbide MOS recommendation: Junxin MOS

What are the design issues of inverters during the transition from silicon to silicon carbide (SiC)? The design of silicon carbide device inverters is a complex process that requires consideration of many factors to ensure their reliability and performance. Therefore, designers need to fully understand the characteristics of silicon carbide devices and make corresponding adjustments during design to ensure that the inverter can meet the requirements of the application environment

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

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