HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

walter fuse current diverter Alloy resistance ever ohms SMD fuse Precision resistor

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

UT6354G-AE3-R,UTC,MOSFETS

UT6354G-AE3-R

MOS ,UT6354G-AE3-R ,P-ch ,1W ,-5A ,-60V ,SOT-23

✖

The image is for reference only, please refer to the drawing for details

Data Sheet： UT6354-H.pdf

Product number：	MOS-MM150P1W00F5AF6001UT
Manufacturer Product Number：	UT6354G-AE3-R
Manufacturer ：	UTC
Series ：	UTC-POWER MOSFET
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	1W
Continuous Drain Current (ID) ：	-5A
Drain-Source Voltage (V) ：	-60V
Package ：	SOT-23
Description：	MOS ,UT6354G-AE3-R ,P-ch ,1W ,-5A ,-60V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	UTC
Product Series	UTC-POWER MOSFET
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

UT6354L-AE3-R

MOS ,UT6354L-AE3-R ,P-ch ,1W ,-5A ,-60V ,SOT-23

$0.000000 More

File

File Type	File Name
Data Sheet	UT6354-H.pdf

Lead time： Estimated delivery date when out of stock 2026-10-30

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Photovoltaic inverters need to convert the direct current generated by solar panels into alternating current and output it to power loads such as water pumps. Therefore, devices that can withstand high voltage, high frequency, and high temperature are required. SiC devices have these characteristics, so it is possible to use SiC devices in photovoltaic inverters, but the specific use needs to be comprehensively considered based on the actual situation.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}