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STMicroelectronics' power MOSFET and IGBT gate drivers are designed to provide a perfect combination of robustness, reliability, system integration, and flexibility. These drivers feature integrated high-voltage half bridge, single and multiple low-voltage gate drivers, making them highly suitable for various applications. In terms of ensuring safety control, the STGAP series isolated gate driver is the preferred solution, providing electrical isolation between the input part and the driven MOSFET or IGBT, ensuring seamless integration and high-quality performance.

Choosing the correct gate driver is crucial for achieving optimal power conversion efficiency. With the widespread adoption of SiC technology, the demand for reliable and safe control solutions is higher than ever before, and ST's STGAP series of electrically isolated gate drivers have become an indispensable part of this. The STGAP2SICS series has been specifically optimized for safety control of SiC MOSFETs and can operate at high voltages up to 1200V, making it an excellent choice for energy-saving power systems, drivers, and control devices. From industrial electric vehicle charging systems to solar energy, induction heating, and automotive OBC DC-DC, the STGAP2SICS series simplifies design, saves space, and enhances robustness and reliability.
STGAP2SICSA is a single channel gate driver that complies with the automotive AEC-Q100 standard, optimizing the control of SiC MOSFETs. It adopts space saving narrow body SO-8 packaging (related model: STGAP2SICSAN) and wide body SO-8W packaging (related model: STGAP2SICSA), providing powerful performance through precise PWM control.
STGAP2SICSA has electrical isolation between the gate drive channel and low voltage control, and can operate at voltages up to 1700V (SO-8) and 1200V (SO-8W). Its input to output propagation time of less than 45ns ensures high PWM accuracy and achieves reliable switching with a common mode transient immunity (CMTI) of ± 100V/ns. Built in protection includes undervoltage lockout (UVLO) to prevent SiC power switches from operating under low efficiency or unsafe conditions, as well as thermal shutdown to lower the output of both drivers if junction temperature is detected to be too high.
STGAP2SICSA has a single output configuration with Miller clamp function. Single output enhances the stability of high-frequency hard switching applications, utilizing Miller clamp to prevent power switch oscillation.
STGAP2SICSA logic input is as low as 3.3V and compatible with TTL and CMOS logic, simplifying the connection with the host microcontroller or DSP. This driver can achieve a push-pull current of up to 4A at a gate driving voltage of up to 26V. The turn off mode with independent input pins helps to minimize system power consumption to the greatest extent possible.

 

意法(ST)栅极驱动MOS
Recently, ST announced the establishment of a partnership with ZINSIGHT Technology (hereinafter referred to as ZINSIGHT). As the only company in the world that has successfully mass-produced electric compressor controllers based on silicon carbide solutions on new energy vehicle 400V, 800V, and 1000V platforms, ZINSIGHT has successfully applied ST's third-generation SiC MOSFET and isolated gate driver technology to ZINSIGHT's first-class electric compressor solutions.

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