SiC Ceramic is a high-performance material with characteristics such as high strength, high hardness, high temperature stability, excellent corrosion resistance, and low thermal expansion coefficient. It is widely used in fields such as semiconductor, aviation, defense, nuclear energy, and chemical industry.
In the semiconductor field, silicon carbide ceramics are mainly used to manufacture devices such as substrates and wafers to support and transport semiconductor chips and other electronic components. Compared to other materials, silicon carbide ceramics have lower surface roughness and higher thermal conductivity, which can improve the quality and efficiency of semiconductor devices, reduce device failures and heat generation.
Meanwhile, in the field of silicon carbide semiconductors abroad, silicon carbide ceramics are also widely used in the manufacturing of silicon carbide (SiC) transistors and diodes and other devices. Due to its higher breakdown electric field strength, faster switching speed, and lower switching losses, silicon carbide devices have become an important representative of the next generation of high-power, high-frequency, and high-temperature applications, and have been widely used in fields such as electric vehicles, solar inverters, wind turbines, industrial drives, and communication equipment.
In summary, silicon carbide ceramics play a crucial role in the semiconductor industry abroad. As high-performance substrates and device materials, they will drive the continuous development of semiconductor and energy technologies, providing people with more efficient, reliable, and environmentally friendly solutions.
