NXP AC-DC solution secondary side controller TEA2096T, dual synchronous rectifier controller PWM. TEA2096T is a new synchronous rectifier (SR) controller IC designed for switching power supplies. It includes an adaptive gate driving method that can achieve high efficiency under any load.
TEA2096T is a controller IC specifically designed for synchronous rectification on the secondary side of resonant converters. It has two driver stages to drive the SR MOSFET, which rectifies the output of the secondary transformer winding with a center tap. Two gate driver stages have their own sensing inputs and operate independently. TEA2096T is suitable for efficient operation and high-frequency switching using extremely low ohm MOSFETs. TEA2096T is made using silicon on insulator (SOI) technology.
TEA2095T/TE is the most suitable resonant power supply for servers, PCs, televisions, adapters, and other switch mode power supplies.
NXP AC-DC solution secondary side controller TEA2096T, dual synchronous rectifier controller PWM adopts SO8 package:
NXP AC-DC solution secondary side controller TEA2096T, dual synchronous rectifier controller PWM efficiency characteristics:
- Adaptive gate drive, capable of achieving high efficiency under any load
The power supply current during energy-saving operation is 80 μ A
-29 mV regulation level, capable of driving low ohm MOSFET
NXP AC-DC solution secondary side controller TEA2096T, dual synchronous rectifier controller PWM application characteristics:
- The drain detection voltage is 200 V
Wide range of power supply voltage (4.5 V~38 V)
Dual synchronous rectification of LLC resonance
Supports 5V operation, with a logic level of SR MOSFET
Detect the differential input of drain and source voltages for each SR MOSFET
SO8 packaging
NXP AC-DC solution secondary side controller TEA2096T, dual synchronous rectifier controller PWM control characteristics:
- SR control without shortest connection time
Adaptive gate drive, can quickly turn off at the end of conduction
Undervoltage lockout (UVLO) with active gate pull-down
Interlocking function to prevent simultaneous conduction of external MOSFETs
Support 1MHz switching frequency
