Infineon's 12V-40V n-channel power MOSFETs are optimized for high current capability and low RDS(on) for a wide range of applications, including DC motors, battery management systems, inverters and DC-DC converters. Its low-voltage MOSFETs are widely used in wireless chargers, battery-powered applications, and low-voltage drive applications such as RC electric vehicles.
Infineon's 12V-40V n-channel power MOSFETs have many features. The compact, comprehensive range includes OptiMOS™ and StrongIRFET™ technology families for low, medium and high power applications. Its product portfolio includes 20V n-channel power MOSFETs, 30V N-channel MOSFETs, and 40V N-channel MOSFETs. Infineon's OptiMOS™ portfolio offers greater efficiency and power density, while the full range of StrongIRFET™ products delivers durability and performance. With these two product families, Infineon has been able to create compact solutions that optimize thermal performance and increase rated current while reducing board area.
The 12V-40V N-channel MOSFET product portfolio is divided into two broad categories. The first category, "on sale and preferred" devices, refers to the latest on sale technology products with excellent performance and low RDS(on). The second category is "on sale" products for wide range switching frequency applications that offer industry-leading factor of quality (FOM) as well as high efficiency and power density.
OptiMOS™ 25V MOSFETs are ideal for server, data communications and telecommunications applications that require very low voltage MOSFET regulator solutions. OptiMOS™ 30V N-channel MOSFETs are designed to improve EMI characteristics and extend battery life, making them particularly suitable for notebook power management. In the latest 40V MOSFETs, it is optimized for high current and low RDS(on). The interchangeable pin options are extended with the new D2PAK 7pin package, greatly enhancing design flexibility. Compared to the standard package, the new series has 13% lower RDS(on) and 50% higher current carrying capacity. The maximum RDS (on) of the IRF40SC240 is only 0.65 milliohm, with a typical value of 0.5 milliohm. The maximum continuous drain current based on package limitations is 360A, a significant increase over the previous series.
Not only does the IRF40SC240 offer increased flexibility, reduced conduction losses at low RDS(on), higher current capacity means a large increase in power density, and the IRF40SC240 is optimized for 10V gate drives, providing immunity to false starts in noisy environments.