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CJ2333,CJ,MOSFETS

CJ2333

MOS ,P-ch ,CJ2333 ,0.35W ,-6A ,-12V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： CJ2333_SOT-23.pdf

Product number：	MOS-MPM0010W35001F1201CJ
Manufacturer Product Number：	CJ2333
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	0.35W
Continuous Drain Current (ID) ：	-6A
Drain-Source Voltage (V) ：	-12V
Package ：	SOT-23
Description：	MOS ,P-ch ,CJ2333 ,0.35W ,-6A ,-12V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	CJ2333_SOT-23.pdf

Lead time： Estimated delivery date 2025-05-18

Quantity

Unit Price

5

$0.123918

20

$0.096380

100

$0.068843

300

$0.060582

Quantity

Unit Price

1000

$0.049567

3000

$0.039929

* Order quantity ：

MPQ：3000

MOQ： 3000

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Voltage polarity and symbol diagram of MOS transistor, N-MOS and P-MOS The following text introduces the symbol rules for N-MOS voltage polarity and P-MOS voltage polarity respectively

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

MOS transistor as a special driving circuit for switch transistor applications (commutation circuit) MOS transistor is a special driving circuit (commutation circuit) used as a switching transistor. Compared with ordinary transistor, MOS transistor has many advantages. However, when applied as a high-power switch transistor, due to the capacitive input characteristics of MOS transistor, the input terminal of MOS transistor is equivalent to a small capacitor. The input switch excitation signal is actually in the process of repeatedly charging and discharging this capacitor. During the charging and discharging process, the MOS transistor conducts and closes with a lag, which slows down the process of "on" and "off", which is not allowed by the switching element (increased power consumption, burning out the switch transistor).

Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Product Recommendation Maker Dynamics Applications