The characteristics of SiC modules: IGBT modules composed of Si material IGBT and FRD are widely used in high current power modules. ROHM has started selling power modules equipped with SiC MOSFETs and SiC SBDs for the first time in the world.
The significant switching losses caused by the tail current of IGBT and the recovery current of FRD can be significantly reduced by switching to SiC power modules, resulting in the following effects:
The reduction of switch losses can improve power efficiency and simplify heat dissipation components
(Example: miniaturization of heat sinks, natural air cooling with water cooling/forced air cooling)
High frequency of operation enables miniaturization of peripheral devices
(Example: miniaturization of reactors or capacitors, etc.)
Mainly used as power sources for industrial machines or power regulators for photovoltaic power generation.
2. Circuit composition: The SiC power module currently in mass production is a 2-in-1 type module that forms a half bridge circuit with one module.
It can be divided into two types: SiC MOSFET+SiC SBD and SiC MOSFET only, which can be selected according to the application.
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